Method for removing contaminants on a substrate
US6933235B2 · kind B2 · utility
2Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2002 |
| Grant date | Aug 23, 2005 |
| Priority date | — |
| Expiry date | Nov 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of processing a substrate is disclosed. The method includes depositing a dielectric layer having a metal oxide on a substrate. A portion of the dielectric layer is removed to form a dielectric structure, thereby exposing a surface of the substrate. For example, the dielectric layer may be patterned using standard photolithographic techniques and etching. An oxide layer is then formed on the exposed surface of the substrate. The oxide layer may be formed using ozone that is generated using ultraviolet radiation. After the oxide layer is formed, it is removed using an etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.