Laser-produced plasma EUV light source with isolated plasma
US6933515B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2003 |
| Grant date | Aug 23, 2005 |
| Priority date | — |
| Expiry date | Oct 15, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05G2/0082
- WIPO fieldMedical technology
- WIPO sectorInstruments
Abstract
An EUV radiation source (40) that includes a nozzle (42) positioned a far enough distance away from a target region (50) so that EUV radiation (56) generated at the target region (50) by a laser beam (54) impinging a target stream (46) emitted from the nozzle (42) is not significantly absorbed by target vapor proximate the nozzle (42). Also, the EUV radiation (56) does not significantly erode the nozzle (42) and contaminate source optics (34). In one embodiment, the nozzle (42) is more than 10 cm away from the target region (50).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.