Patent · US Expired

RF circuits including transistors having strained material layers

US6933518B2 · kind B2 · utility

13Cited by

120References

9Claims

0Family size

Assignee

AMBERWAVE SYSTEMS CORPORATION · US

Inventors

Glyn Braithwaite · Hooksett, US
Richard Hammond · Harriseahead, GB
Matthew T. Currie · Brookline, US

Key dates

Filing date	Sep 24, 2002
Grant date	Aug 23, 2005
Priority date	—
Expiry date	Nov 14, 2022

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/691
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values for, for example, transconductance and noise figure. RF circuits such as, for example, voltage controlled oscillators (“VCOs”), low noise amplifiers (“LNAs”), and phase locked loops (“PLLs”) built using these FETs also exhibit enhanced performance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.