Power transistor structure with non-uniform metal widths
US6933562B1 · kind B1 · utility
2Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2003 |
| Grant date | Aug 23, 2005 |
| Priority date | — |
| Expiry date | Jun 27, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power transistor structure uses metal drain and source strips with non-uniform widths to reduce variations in current density across the power transistor structure. The reductions in current density, in turn, reduce the source-to-drain turn on resistance and maximize the overall current carrying capacity of power transistor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.