Optical proximity correction method utilizing gray bars as sub-resolution assist features
US6934010B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 27, 2002 |
| Grant date | Aug 23, 2005 |
| Priority date | — |
| Expiry date | Feb 27, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70441
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photolithography mask for optically transferring a pattern formed in the mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, and at least one non-resolvable optical proximity correction feature disposed between two of the resolvable features to be printed, where the non-resolvable optical proximity correction feature has a transmission coefficient in the range of greater than 0% to less than 100%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.