Substrate processing apparatus and substrate processing method
US6936134B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2001 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Nov 13, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S414/139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing apparatus comprises a heating process chamber in which a heating process is performed for a wafer, a load lock chamber, connected to the heating process chamber, for controlling at least oxygen concentration and pressure, a transferring arm transferring the wafer between the heating process chamber and the load lock chamber, and a gate valve shielding the heating process chamber from the load lock chamber. Thus, an insulation film with high quality can be formed. In addition, the wafer is temporarily placed in the load lock chamber adjacent to the heating process chamber without need to be transferred to another unit. Thus, the transferring time period for the wafer can be shortened. In addition, footprints can be decreased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.