Method of forming a shallow junction
US6936505B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2003 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Sep 12, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a shallow junction in a semiconductor substrate is disclosed. The method of one embodiment comprises preamorphizing a first region of a semiconductor substrate to a first depth and implanting recrystallization inhibitors into a second region of the semiconductor substrate. The second region is a part of the first region and has a second depth. Next, a dopant is implanted into a third region of the semiconductor substrate with the third region being a part of the second region and a first annealing is performed to selectively recrystallize the first region that has no recrystallization inhibitors. Next, a second annealing is performed to recrystallize the second region and diffuse the dopant within the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.