Method of polishing a semiconductor substrate, post-CMP cleaning process, and method of cleaning residue from registration alignment markings
US6936540B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 18, 2003 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Sep 18, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A post-CMP cleaning process includes brush cleaning a CMPed surface, followed by at least partially drying the CMPed surface, followed by spray cleaning the CMPed surface. A method of cleaning residue from registration alignment markings formed on a semiconductor substrate includes polishing a material within which the registration alignment markings are received with a polishing solution comprising a liquid and a solid, followed by brush cleaning a remaining outermost polished surface, followed by at least partially drying the polished surface, followed by spray cleaning the outermost polished surface. Other aspects and implementations are contemplated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.