Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memory
US6936884B2 · kind B2 · utility
38Cited by
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32Claims
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Key dates
| Filing date | Oct 14, 2003 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Feb 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon (SONSNOS) structure memory device includes a first insulating layer and a second insulating layer stacked on a channel of a substrate, a first dielectric layer and a second dielectric layer formed on the first insulating layer and under the second insulating layer, respectively, and a group IV semiconductor layer, silicon quantum dots, or metal quantum dots interposed between the first dielectric layer and the second dielectric layer. The provided SONSNOS structure memory device improves a programming rate and the capacity of the memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.