Sensor with at least one micromechanical structure and method for production thereof
US6936902B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2000 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Jan 8, 2021 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0145
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A sensor has a foundation wafer having a sensor chamber, at least one silicon-based micromechanical structure integrated with the sensor chamber of the foundation wafer, at least one covering that covers the foundation wafer in a region of the sensor chamber, the covering including a first layer which is a deposition layer and is permeable to an etching medium and reaction products, and a hermetically sealing second layer which is a sealing layer and located above the first layer, the deposition layer which is the first layer being permeable in a region of the sensor chamber to the etching medium and a reaction product, the deposition layer for being permeable having structures selected from the group consisting of etching openings, porous regions, and both.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.