Patent · US Expired

Sensor with at least one micromechanical structure and method for production thereof

US6936902B2 · kind B2 · utility

19Cited by
8References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 14, 2000
Grant dateAug 30, 2005
Priority date
Expiry dateJan 8, 2021

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81C2203/0145
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A sensor has a foundation wafer having a sensor chamber, at least one silicon-based micromechanical structure integrated with the sensor chamber of the foundation wafer, at least one covering that covers the foundation wafer in a region of the sensor chamber, the covering including a first layer which is a deposition layer and is permeable to an etching medium and reaction products, and a hermetically sealing second layer which is a sealing layer and located above the first layer, the deposition layer which is the first layer being permeable in a region of the sensor chamber to the etching medium and a reaction product, the deposition layer for being permeable having structures selected from the group consisting of etching openings, porous regions, and both.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.