Magnetic memory device
US6937506B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2004 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Jan 10, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A random access memory (MRAM) that includes a magnetic memory cell that is switchable between two states under the influence of a magnetic field. The MARAM also includes an electrical bit line coupled to the magnetic memory cell for generating the magnetic field. The electrical bit line includes a conductive component and a magnetic component to guide magnetic flux associated with the magnetic field towards the magnetic memory cell. A thermal insulator is positioned between the conductive portion and the magnetic memory cell, and the magnetic component has at least one guiding portion that extends from the conductive component towards the magnetic memory cell to guide the magnetic flux around at least a portion of the thermal insulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.