Polishing system with in-line and in-situ metrology
US6939198B1 · kind B1 · utility
39Cited by
65References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2002 |
| Grant date | Sep 6, 2005 |
| Priority date | — |
| Expiry date | Jul 26, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.