Method for manufacturing capacitor of semiconductor device
US6939759B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2003 |
| Grant date | Sep 6, 2005 |
| Priority date | — |
| Expiry date | Jan 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses method for manufacturing capacitor of semiconductor device wherein a bonding layer is exposed via etch-back process without using a contact hole mask. In accordance with the method of the present invention, an interlayer insulating film, a bonding layer and a hard mask layer are sequentially formed on a semiconductor substrate. The hard mask layer, the bonding layer and the interlayer insulating film are then etched to form a storage electrode contact hole. The storage electrode contact hole is partially filled to form a storage electrode contact plug and the remaining portion is filled with a barrier metal layer pattern. The hard mask layer is then removed and a storage electrode contacting the barrier metal layer pattern is then formed on the bonding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.