Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device
US6939794B2 · kind B2 · utility
36Cited by
5References
25Claims
0Family size
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Key dates
| Filing date | Jun 17, 2003 |
| Grant date | Sep 6, 2005 |
| Priority date | — |
| Expiry date | Jun 17, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A hard mask comprising boron-doped amorphous carbon, and a method for forming the hard mask, provides improved resistance to etches of a variety of materials compared with previous amorphous carbon hard mask layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.