Removal of carbon from an insulative layer using ozone
US6939817B2 · kind B2 · utility
506Cited by
7References
57Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 8, 2003 |
| Grant date | Sep 6, 2005 |
| Priority date | — |
| Expiry date | Jul 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of removing residual carbon deposits from a flowable, insulative material. The flowable, insulative material comprises silicon, carbon, and hydrogen and is a flowable oxide material or a spin-on, flowable oxide material. The residual carbon deposits are removed from the flowable, insulative material by exposing the material to ozone. The flowable, insulative material is used to form an insulative layer in a trench located on a semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.