High frequency semiconductor module, high frequency semiconductor device and manufacturing method for the same
US6940157B2 · kind B2 · utility
1Cited by
1References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2004 |
| Grant date | Sep 6, 2005 |
| Priority date | — |
| Expiry date | Aug 2, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high frequency semiconductor module, includes: a semiconductor chip having top and bottom surfaces; a semiconductor element merged in the semiconductor chip; a ground pad of the semiconductor element disposed on the top surface; a metal layer configured to connect to the ground pad and extend to sidewalls of the semiconductor chip; a ground metal arranged on a surface of a mounting substrate; and a conductive material formed on the ground, configured to connect the metal layer and the ground metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.