Magnetic memory device
US6940747B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2004 |
| Grant date | Sep 6, 2005 |
| Priority date | — |
| Expiry date | Jun 4, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a magnetic memory device. An embodiment of the present invention includes a magnetic memory cell that is switchable between two states offering electrical resistance which are detectible by a sense current though the magnetic memory cell. The device includes a field effect transistor (FET) arrangement which has a source and a drain. The source and the drain are connected by a connecting element which projects from a portion of the device and which has an electrical conductivity that varies in response to a gate voltage applied to the connecting element. The magnetic memory cell is in electrical communication with the connecting element so that at least a portion of the sense current is in use associated with a corresponding gate voltage and the FET arrangement amplifies at least a portion of the sense current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.