MRAM array with segmented word and bit lines
US6940749B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 23, 2003 |
| Grant date | Sep 6, 2005 |
| Priority date | — |
| Expiry date | Oct 18, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and system for providing and using a magnetic random access memory (MRAM) array are disclosed. The method and system include providing magnetic storage cells, global word lines and global word line segments, of global bit lines and bit line segments, and selection devices. Each word line segment is coupled with at least one global word line such that the word line segments are selectable. Each word line segment is also coupled to a portion of the magnetic storage cells. Each bit line segment is coupled with at least one global bit line such the bit line segments are selectable. Each bit line segment resides in proximity to and is used to write to a portion of the magnetic storage cells. The bit line segments and the word line segments are coupled with and selectable using the plurality of selection devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.