High-speed diaphragm valve for atomic layer deposition
US6941963B2 · kind B2 · utility
15Cited by
31References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2003 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | Sep 23, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T137/6606
- WIPO fieldMechanical elements
- WIPO sectorMechanical engineering
Abstract
A diaphragm valve includes a pressure vent communicating with an enclosed space behind the diaphragm for reducing resistance to transitioning of the diaphragm between the open and closed positions. In some implementations, a pump or other source of suction is coupled to the pressure vent to reduce fluid pressure in the enclosed space. When used in an atomic layer deposition (ALD) system, the venting and suction improves the thin film deposition process and prevents leakage through the valve of potentially toxic ALD precursor vapors. Features for thermal management and reliability enhancement are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.