Magnetic random access memory designs with controlled magnetic switching mechanism by magnetostatic coupling
US6943040B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2003 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | Nov 7, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3272
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic tunneling junction (MTJ) memory cell for a magnetic random access memory (MRAM) array is formed as a chain of magnetostatically coupled segments. The segments can be circular, elliptical, lozenge shaped or shaped in other geometrical forms. Unlike the isolated cells of typical MTJ designs which exhibit curling of the magnetization at the cell ends and uncompensated pole structures, the present multi-segmented design, with the segments being magnetostatically coupled, undergoes magnetization switching at controlled nucleation sites by the fanning mode. As a result, the multi-segmented cells of the present invention are not subject to variations in switching fields due to shape irregularities and structural defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.