Process for low temperature atomic layer deposition of RH
US6943073B2 · kind B2 · utility
11Cited by
8References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2002 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | Oct 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for the formation of rhodium films with good step coverage is disclosed. Rhodium films are formed by a low temperature atomic layer deposition technique using a first gas of rhodium group metal precursor followed by an oxygen exposure. The invention provides, therefore, a method for forming smooth and continuous rhodium films which also have good step coverage and a reduced carbon content.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.