Manufacturing of a corrosion protected interconnect on a substrate
US6943101B2 · kind B2 · utility
13Cited by
2References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 22, 2002 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | Mar 10, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15747
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating an interconnect on a surface of a passivated substrate includes applying a diffusion barrier to the surface of the passivated substrate and applying a mask to the diffusion barrier. The mask is then patterned to provide an opening for the interconnect. The interconnect is deposited in the opening and the mask is removed. Those portions of the diffusion barrier that are not covered by the interconnect are also removed. The interconnect and what is left of the diffusion barrier are then encapsulated by metal-selective wet-chemical dip coating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.