Wavelength extension for backthinned silicon image arrays
US6943425B2 · kind B2 · utility
1Cited by
14References
27Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 23, 2004 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | Feb 8, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/80
Abstract
There is described a back thinned sensor in which a material is added on the front surface to extend the wavelength of the sensor into wavelengths it normally does not reach. In the preferred embodiment, the back-thinned layer comprises silicon and is the base for a CMOS device or a CCD. The photocathode in a night vision device comprises in the preferred unit GaAs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.