Semiconductor devices containing a discontinuous cap layer and methods for forming same
US6943451B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2001 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | Jul 2, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Novel semiconductor devices containing a discontinuous cap layer and possessing a relatively low dielectric constant are provide herein. The novel semiconductor devices includes at least a substrate, a first dielectric layer applied on at least a portion of the substrate, a first set of openings formed through the dielectric layer to expose the surface of the substrate so that a conductive material deposited within and filling the openings provides a first set of electrical contact conductive elements and a discontinuous layer of cap material covering at least the top of the conductive elements to provide a first set of discontinuous cap elements. Methods for forming the semiconductor devices are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.