Inventor · Poughquag, NY, US

Satyanarayana V. Nitta

89Patents
18h-index
114Co-inventors
87Inventor score

Filing activity: Aug 31, 2000 → Feb 28, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US8241992B2 Method for air gap interconnect integration using photo-patternable low k material Electricity 401 Active
US6413852B1 Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material Electricity 130 Expired
US9324650B2 Interconnect structures with fully aligned vias Electricity 76 Active
US6451712B1 Method for forming a porous dielectric material layer in a semiconductor device and device formed Electricity 71 Expired
US7037744B2 Method for fabricating a self-aligned nanocolumnar airbridge and structure produced thereby Electricity 68 Expired
US8525169B1 Reliable physical unclonable function for device authentication Electricity 66 Active
US6911400B2 Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same Emerging Cross-Sectional Technologies 58 Expired
US7030495B2 Method for fabricating a self-aligned nanocolumnar airbridge and structure produced thereby Electricity 58 Expired
US6737725B2 Multilevel interconnect structure containing air gaps and method for making Electricity 41 Expired
US6346484B1 Method for selective extraction of sacrificial place-holding material used in fabrication of air gap-containing interconnect structures Electricity 38 Expired
US7179758B2 Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics Electricity 37 Expired
US6677680B2 Hybrid low-k interconnect structure comprised of 2 spin-on dielectric materials Electricity 36 Expired
US7534696B2 Multilayer interconnect structure containing air gaps and method for making Electricity 28 Active
US6603204B2 Low-k interconnect structure comprised of a multilayer of spin-on porous dielectrics Electricity 28 Expired
US6930034B2 Robust ultra-low k interconnect structures using bridge-then-metallization fabrication sequence Electricity 25 Expired
US6641899B1 Nonlithographic method to produce masks by selective reaction, articles produced, and composition for same Emerging Cross-Sectional Technologies 20 Expired
US7790601B1 Forming interconnects with air gaps Electricity 18 Active
US7405147B2 Device and methodology for reducing effective dielectric constant in semiconductor devices Emerging Cross-Sectional Technologies 18 Expired
US8288268B2 Microelectronic structure including air gap Electricity 17 Active
US7084479B2 Line level air gaps Electricity 16 Expired
US7943480B2 Sub-lithographic dimensioned air gap formation and related structure Electricity 15 Active
US8120179B2 Air gap interconnect structures and methods for forming the same Electricity 13 Active
US6943451B2 Semiconductor devices containing a discontinuous cap layer and methods for forming same Electricity 12 Expired
US6716742B2 Low-k interconnect structure comprised of a multilayer of spin-on porous dielectrics Electricity 11 Expired
US8642252B2 Methods for fabrication of an air gap-containing interconnect structure Electricity 11 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.