Patent · US Expired

Method for reading out or in a status from or to a ferroelectrical transistor of a memory cell and memory matrix

US6944044B2 · kind B2 · utility

1Cited by

4References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Holger Goebel · Hamburg, DE
Heinz Hoenigschmid · Starnberg, DE
Wolfgang Hönlein · Unterhaching, DE
Thomas Haneder · Hersbruck, DE

Key dates

Filing date	Dec 19, 2001
Grant date	Sep 13, 2005
Priority date	—
Expiry date	Dec 19, 2021

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/943
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The state is read out from the ferroelectric transistor or stored in the ferroelectric transistor. During the read-out or storage of the state, at least one further ferroelectric transistor in the memory matrix is driven in such a way that it is operated in its depletion region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.