Semiconductor non-volatile storage device
US6944056B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 2001 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | Jul 1, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/40
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor non-volatile storage device of the present invention which lets a memory cell directly drive up to a local bit line, wherein the output of the local bit line is received by a gate electrode of a separately-provided signal amplifying transistor, and the signal amplifying transistor is used to drive a global bit line having a large load capacity. Since an amplifying transistor having a drive power higher than a memory cell drives the parasitic capacity of a global bit line, information stored in a memory cell can be read out at high speed. Therefore, the storage device is used for storing program codes for controlling microcomputers or the like to thereby enhance a system performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.