Inventor · Tokyo, JP

Nozomu Matsuzaki

66Patents
17h-index
67Co-inventors
87Inventor score

Filing activity: Jul 13, 1990 → Aug 29, 2018

Most-cited inventions

PatentTitleAreaCited byStatus
US7864568B2 Semiconductor storage device Physics 216 Active
US6785165B2 Semiconductor device Electricity 56 Expired
US6307236A Semiconductor integrated circuit device Emerging Cross-Sectional Technologies 51 Expired
US7057230B2 Nonvolatile semiconductor memory device employing transistors having different gate withstand voltages for enhanced reading speed Physics 50 Expired
US6833582B2 Nonvolatile semiconductor memory device Physics 45 Expired
US6461916B1 Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making the device Electricity 39 Expired
US6972997B2 Nonvolatile semiconductor memory device Electricity 34 Expired
US7414283B2 Semiconductor device Physics 25 Expired
US6444554B1 Method of making a non-volatile memory and semiconductor device Electricity 22 Expired
US7700992B2 Semiconductor device Physics 22 Active
US8017986B2 Semiconductor device Physics 22 Active
US6617632B2 Semiconductor device and a method of manufacturing the same Electricity 19 Expired
US8054680B2 Semiconductor device Physics 18 Expired
US7427791B2 Method of forming a CMOS structure having gate insulation films of different thicknesses Emerging Cross-Sectional Technologies 18 Expired
US7667218B2 Semiconductor integrated circuit device and method of manufacturing the same Electricity 17 Expired
US7206216B2 Semiconductor device with a non-erasable memory and/or a nonvolatile memory Physics 17 Expired
US6500715B2 Method of forming a CMOS structure having gate insulation films of different thicknesses Emerging Cross-Sectional Technologies 17 Expired
US7130223B2 Nonvolatile semiconductor memory device Electricity 15 Expired
US7132718B2 Fabrication method and structure of semiconductor non-volatile memory device Electricity 14 Expired
US6944056B2 Semiconductor non-volatile storage device Electricity 12 Expired
US7528036B2 Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device Electricity 11 Expired
US7796426B2 Semiconductor device Physics 10 Active
US6657248B1 Semiconductor device having groove isolation structure and gate oxide films with different thickness Electricity 10 Expired
US5680066A Signal transition detector circuit Electricity 9 Expired
US5619151A Semiconductor device Electricity 9 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.