Method to obtain temperature independent program threshold voltage distribution using temperature dependent voltage reference
US6944057B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2003 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | May 6, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for controlling gate voltage in a memory device is described. The method includes providing a circuit that is adapted to be coupled with the memory device. The circuit is for generating a reference voltage. The method further includes utilizing the reference voltage provided by the circuit to apply a voltage at a gate of the memory device. The voltage has a value corresponding to a temperature of the memory device. The method also includes retaining a proportional relationship between the reference voltage and the temperature of the memory device, regardless of the change in the temperature of the memory device. The reference voltage provides a substantially constant programming time for the memory device regardless of the temperature of the memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.