Patent · US Expired

Method of fabricating heteroepitaxial microstructures

US6946317B2 · kind B2 · utility

11Cited by
5References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 3, 2003
Grant dateSep 20, 2005
Priority date
Expiry dateJan 13, 2024

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/76254
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

An efficient method of fabricating a high-quality microstructure having a smooth surface. The method includes detaching a layer from a base structure to provide a carrier substrate having a detached surface, and then forming a microstructure on the detached surface of the carrier substrate by depositing an epitaxial layer on the detached surface of a carrier substrate. Also included is a microstructure fabricated from such method.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.