Bruce Faure
35Patents
8h-index
30Co-inventors
71Inventor score
Filing activity: Nov 3, 2003 → Jun 13, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7601217B2 | Method of fabricating an epitaxially grown layer | Emerging Cross-Sectional Technologies | 13 | Active |
| US7670930B2 | Method of detaching a thin film by melting precipitates | Electricity | 12 | Active |
| US7226509B2 | Method for fabricating a carrier substrate | Emerging Cross-Sectional Technologies | 12 | Expired |
| US7981767B2 | Methods for relaxation and transfer of strained layers and structures fabricated thereby | Emerging Cross-Sectional Technologies | 12 | Active |
| US6946317B2 | Method of fabricating heteroepitaxial microstructures | Electricity | 11 | Expired |
| US7229898B2 | Methods for fabricating a germanium on insulator wafer | Electricity | 10 | Expired |
| US7839001B2 | Methods for making substrates and substrates formed therefrom | Electricity | 9 | Active |
| US7288430B2 | Method of fabricating heteroepitaxial microstructures | Electricity | 8 | Expired |
| US7261777B2 | Method for fabricating an epitaxial substrate | Emerging Cross-Sectional Technologies | 8 | Expired |
| US7646038B2 | Method of fabricating heteroepitaxial microstructures | Electricity | 7 | Active |
| US7736935B2 | Passivation of semiconductor structures having strained layers | Electricity | 7 | Active |
| US7615468B2 | Methods for making substrates and substrates formed therefrom | Electricity | 7 | Active |
| US7939428B2 | Methods for making substrates and substrates formed therefrom | Electricity | 6 | Active |
| US7537949B2 | Optoelectronic substrate and methods of making same | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7538010B2 | Method of fabricating an epitaxially grown layer | Emerging Cross-Sectional Technologies | 5 | Active |
| US8105916B2 | Relaxation and transfer of strained layers | Electricity | 4 | Active |
| US8153500B2 | Method of fabricating an epitaxially grown layer on a composite structure | Electricity | 3 | Active |
| US7375008B2 | Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof | Electricity | 3 | Expired |
| US9242444B2 | Method of fabricating a composite structure with a stable bonding layer of oxide | Emerging Cross-Sectional Technologies | 3 | Active |
| US8093138B2 | Method of fabricating an epitaxially grown layer | Emerging Cross-Sectional Technologies | 3 | Active |
| US7135383B2 | Composite structure with high heat dissipation | Electricity | 3 | Expired |
| US7602046B2 | Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof | Electricity | 2 | Expired |
| US9011598B2 | Method for making a composite substrate and composite substrate according to the method | Emerging Cross-Sectional Technologies | 2 | Active |
| US8263984B2 | Process for making a GaN substrate | Electricity | 1 | Active |
| US8492244B2 | Methods for relaxation and transfer of strained layers and structures fabricated thereby | Emerging Cross-Sectional Technologies | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.