Method for fabricating trench isolations with high aspect ratio
US6946359B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2003 |
| Grant date | Sep 20, 2005 |
| Priority date | — |
| Expiry date | Nov 8, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a trench isolation with high aspect ratio. The method comprises the steps of: providing a substrate with a trench; depositing a first isolation layer filling the trench by low pressure chemical vapor deposition; etching the first isolation layer so that its surface is lowered to the opening of the trench; depositing a second isolation layer to fill the trench without voids by high density plasma chemical vapor deposition and achieving global planarization by chemical-mechanical polishing then providing a rapidly annealing procedure. Accordingly, the present invention achieves void-free trench isolation with high aspect ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.