Patent · US Expired

Process for producing ultrathin homogenous metal layers

US6946386B2 · kind B2 · utility

1Cited by

1References

8Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Gernot Steinlesberger · Munich, DE
Manfred Engelhardt · Feldkirchen-Westerham, DE
Eugen Unger · Augsburg, DE

Key dates

Filing date	May 25, 2004
Grant date	Sep 20, 2005
Priority date	—
Expiry date	May 25, 2024

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC23C28/023
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method of forming an ultrathin homogenous metal layer that serves as base metallization for formation of contact locations and/or contact pads and/or wirings of an integrated electronic component. The method includes the steps of depositing a first metal layer on a substrate at least in regions, and producing a second metal layer on the first metal layer at least in regions, component(s) of the second metal layer have a more positive redox potential than component(s) of the first metal layer, wherein ultrathin homogenous deposition of the second metal layer is effected by wet-chemical, current-free, electrochemical redox processes by element exchange from one or more metal salts as oxidant with at least a top metal atomic layer of the first metal layer as reductant.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.