Plasma treatment for copper oxide reduction
US6946401B2 · kind B2 · utility
19Cited by
42References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2003 |
| Grant date | Sep 20, 2005 |
| Priority date | — |
| Expiry date | Sep 4, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides an in situ plasma reducing process to reduce oxides or other contaminants, using a compound of nitrogen and hydrogen, typically ammonia, at relatively low temperatures prior to depositing a subsequent layer thereon. The adhesion characteristics of the layers are improved and oxygen presence is reduced compared to the typical physical sputter cleaning process of an oxide layer. This process may be particularly useful for the complex requirements of a dual damascene structure, especially with copper applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.