Method of formation of semiconductor resistant to hot carrier injection stress
US6949433B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2003 |
| Grant date | Sep 27, 2005 |
| Priority date | — |
| Expiry date | Jan 1, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/954
Abstract
The present invention, in one embodiment, relates to a process for fabricating a semiconductor device that is resistant to hot carrier induced stress. The method includes the steps of forming an oxide layer on a semiconductor substrate, the oxide layer and the semiconductor substrate forming a substrate-oxide interface, in which the interface includes at least one of silicon-hydrogen bonds or dangling silicon bonds; and exposing the interface to ultraviolet radiation and an atmosphere comprising at least one gas having at least atom capable of forming a silicon-atom bond under conditions sufficient to convert at least a portion of the at least one of silicon-hydrogen bonds or dangling silicon bonds to silicon-atom bonds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.