Methods of forming MIM capacitors

US6949442B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hans-Joachim Barth · Munich, DE
• Petra Felsner · Munich, DE
• Erdem Kaltalioglu · Newburgh, US
• Gerald Friese · Munich, DE

Key dates

• Filing date: May 5, 2003
• Grant date: Sep 27, 2005
• Expiry date: May 5, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/682
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming a MIM capacitor and a MIM capacitor device formed by same. A preferred embodiment comprises selectively forming a first cap layer over a wafer including a MIM capacitor bottom plate, and depositing an insulating layer over the MIM capacitor bottom plate. The insulating layer is patterned with a MIM capacitor top plate pattern, and a MIM dielectric material is deposited over the patterned insulating layer. A conductive material is deposited over the MIM dielectric material, and the wafer is planarized to remove the conductive material and MIM dielectric material from the top surface of the insulating layer and form a MIM capacitor top plate. A second cap layer is selectively formed over the MIM capacitor top plate.