Method for manufacturing semiconductor device having porous structure with air-gaps
US6949456B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 24, 2003 |
| Grant date | Sep 27, 2005 |
| Priority date | — |
| Expiry date | Jan 3, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes: (i) depositing a sacrificial layer made of an organic polymer such as benzocyclobutene on a substrate having a circuit formed thereon; (ii) etching the sacrificial layer except for a portion where air gaps are to be formed; (iii) depositing a low-dielectric layer over the substrate until the portion for air gaps is entirely enclosed in the low-dielectric layer; (iv) etching the low-dielectric layer to form via holes and trenches there through; (v) prior or subsequent to step (iv), removing the portion for air gaps; and (vi) depositing copper in the vias and trenches which are filled with the copper contacting a surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.