Method for fabricating poly patterns
US6949471B2 · kind B2 · utility
0Cited by
8References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2003 |
| Grant date | Sep 27, 2005 |
| Priority date | — |
| Expiry date | Oct 19, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating polysilicon patterns. The method includes depositing polysilicon on a substrate. The polysilicon may be doped or pre-doped depending upon the application. A mask layer is applied and patterned. Thereafter, the polysilicon is etched to form the polysilicon patterns and an oxidizing step is performed. The mask layer is removed after the oxidizing step is performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.