Patent · US Expired

Magnetic tunnel junction magnetic device, memory and writing and reading methods using said device

US6950335B2 · kind B2 · utility

96Cited by

5References

17Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Bernard Dieny · Le Pont-de-Claix, FR
Olivier Redon · Seyssinet-Pariset, FR

Key dates

Filing date	Nov 14, 2002
Grant date	Sep 27, 2005
Priority date	—
Expiry date	Nov 14, 2022

Classification

Technology area (CPC H)Electricity
CPC primaryH01F10/3272
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

Magnetic tunnel junction magnetic device (16) for writing and reading uses a reference layer (20c) and a storage layer (20a) separated by a semiconductor or insulating layer (20b). The blocking temperature of the magnetisation of the storage layer is less than that of the reference layer. The storage layer is heated (22, 24) above the blocking temperature of its magnetisation. A magnetic field (34) is applied (26) to it orientating its magnetization with respect to that of the reference layer without modifying the orientation of the reference layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.