High surface quality GaN wafer and method of fabricating same
US6951695B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2002 |
| Grant date | Oct 4, 2005 |
| Priority date | — |
| Expiry date | Nov 22, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/21
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
AlxGayInzN, wherein 0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z=1, characterized by a root mean square surface roughness of less than 1 nm in a 10×10 μm2 area. The AlxGayInzN may be in the form of a wafer, which is chemically mechanically polished (CMP) using a CMP slurry comprising abrasive particles, such as silica or alumina, and an acid or a base. High quality AlxGayInzN wafers can be fabricated by steps including lapping, mechanical polishing, and reducing internal stress of said wafer by thermal annealing or chemical etching for further enhancement of its surface quality. CMP processing may be usefully employed to highlight crystal defects of an AlxGayInzN wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.