Method for forming interconnects on thin wafers

US6951775B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Leonard Gardecki · Saint Johnsbury Center, US
• James R. Palmer · Baton Rouge, US
• Erik M. Probstfield · Saint Albans, US
• Adolf E. Wirsing · South Hero, US

Key dates

• Filing date: Jun 28, 2003
• Grant date: Oct 4, 2005
• Expiry date: Jun 28, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/19043
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming a semiconductor interconnect including, in the order recited: (a) providing a semiconductor wafer; (b) forming bonding pads in a terminal wiring level on the frontside of the wafer; (c) reducing the thickness of the wafer; (d) forming solder bumps on the bonding pads; and (e) dicing the wafer into bumped semiconductor chips.