Advanced process control of the manufacture of an oxide-nitride-oxide stack of a memory device, and system for accomplishing same
US6953697B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2002 |
| Grant date | Oct 11, 2005 |
| Priority date | — |
| Expiry date | Oct 22, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/954
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is generally directed to an advanced process control of the manufacture of memory devices, and a system for accomplishing same. In one illustrative embodiment, the method comprises performing at least one process operation to form at least one layer of an oxide-nitride-oxide stack of a memory cell, the stack being comprised of a first layer of oxide positioned above a first layer of polysilicon, a layer of silicon nitride positioned above the first layer of oxide, and a second layer of oxide positioned above the layer of silicon nitride. The method further comprises measuring at least one characteristic of at least one of the first layer of polysilicon, the first oxide layer, the layer of silicon nitride, and the second layer of oxide and adjusting at least one parameter of at least one process operation used to form at least one of the first oxide layer, the layer of silicon nitride and the second oxide layer if the measured at least one characteristic is not within acceptable limits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.