Fabrication process of a semiconductor device
US6953731B2 · kind B2 · utility
9Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2003 |
| Grant date | Oct 11, 2005 |
| Priority date | — |
| Expiry date | Jun 10, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabrication a semiconductor device includes the steps of forming an insulation film containing Si and oxygen on a silicon substrate, and depositing a metal oxide film on the insulation film by a chemical vapor deposition process that uses a metal organic source material, wherein the step of depositing the metal oxide film is conducted such that the metal oxide film takes a crystalline state immediately after the deposition step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.