Process for transferring a layer of strained semiconductor material
US6953736B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2003 |
| Grant date | Oct 11, 2005 |
| Priority date | — |
| Expiry date | Jul 9, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/938
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a process for producing an electronic structure that includes a thin layer of strained semiconductor material from a donor wafer. The donor wafer has a lattice parameter matching layer that includes an upper layer of a semiconductor material having a first lattice parameter and a film of semiconductor material having a second, nominal, lattice parameter that is substantially different from the first lattice parameter and that is strained by the matching layer. This process includes transfer of the film to a receiving substrate. The invention also relates to the semiconductor structures that can be produced by the process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.