Ion beam utilization during scanned ion implantation
US6953942B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2004 |
| Grant date | Oct 11, 2005 |
| Priority date | — |
| Expiry date | Oct 19, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/30488
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to implanting ions in a workpiece in a serial implantation process in a manner that produces a scan pattern that resembles the size, shape and/or other dimensional aspects of the workpiece. This improves efficiency and yield as an ion beam that the workpiece is oscillated through does not significantly “overshoot” the workpiece. The scan pattern may be slightly larger than the workpiece, however, so that inertial effects associated with changes in direction, velocity and/or acceleration of the workpiece as the workpiece reverses direction in oscillating back and forth are accounted for within a small amount of “overshoot”. This facilitates moving the workpiece through the ion beam at a relatively constant velocity which in turn facilitates substantially more uniform ion implantation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.