Semiconductor filter circuit and method
US6953980B2 · kind B2 · utility
19Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2002 |
| Grant date | Oct 11, 2005 |
| Priority date | — |
| Expiry date | Feb 26, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/601
Abstract
A filter circuit (10) is formed on a semiconductor substrate (11) formed with a trench (40) that is lined with a dielectric layer (38). A conductive material (37) is disposed in the trench and coupled to a node (62) to provide a capacitance that modifies a frequency response of an input signal (VIN) to produce a filtered signal (VOUT). An electrostatic discharge device includes an inductor (74) coupled to back to back diodes (17, 18) formed in the substrate to avalanche when a voltage on the node reaches a predetermined magnitude.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.