Semiconductor device having internal voltage generated stably
US6954103B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2003 |
| Grant date | Oct 11, 2005 |
| Priority date | — |
| Expiry date | May 2, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A manner of generating internal voltages such as a high voltage, an intermediate voltage and an internal power supply voltage is switched in accordance with a power supply level setting signal. When the voltage level of an external power supply voltage is low, a current drive transistor receiving an output of a comparing circuit and an auxiliary drive transistor are forcedly set in a conductive state, and external power supply voltage is transmitted on an internal power supply line. At this time, the comparing operation of the comparing circuit is stopped. When the level of the external power supply voltage is high, the comparing circuit is activated down convert the external power supply voltage for generating a peripheral power supply voltage on the internal power supply line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.