Method of manufacturing a semiconductor device
US6955870B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2002 |
| Grant date | Oct 18, 2005 |
| Priority date | — |
| Expiry date | Oct 17, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R1/07314
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of manufacturing a semiconductor device has forming process for forming a semiconductor device on a major surface of a wafer, and testing process for testing defect of the semiconductor device formed on the wafer. The testing process includes a step bringing a testing apparatus into contact with test electrodes of the semiconductor device. The testing apparatus has a contactor including a plurality of probes that come into contact with the test electrodes of the semiconductor device to be tested, and secondary electrodes electrically connected to the probes and disposed on a surface opposite to the probes; a substrate on which electrodes electrically communicated to the contactor by a conducting device. The conducting device is so formed that stress applied to the conducting device in the state where the probes are in contact with the test electrodes is larger than stress applied to the conducting device in the state where the probes are not in contact with the test electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.