Group III nitride compound semiconductor light-emitting element
US6956245B2 · kind B2 · utility
29Cited by
3References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 30, 2003 |
| Grant date | Oct 18, 2005 |
| Priority date | — |
| Expiry date | May 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A Group III nitride compound semiconductor light-emitting element has a reflecting surface on a side opposite to a main light-emitting surface of the element viewed from a light-emitting layer. The reflecting surface is inclined to surfaces of growth of semiconductor layers. Light emitted from the light-emitting layer is reflected by the reflecting surface, so that the reflected light emerges from side surfaces of the light-emitting element to the outside without passing through the semiconductor layers (particularly, the light-emitting layer).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.