Patent · US Expired

Method of electroplating copper over a patterned dielectric layer to enhance process uniformity of a subsequent CMP process

US6958247B2 · kind B2 · utility

5Cited by

5References

18Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Gerd Marxsen · Radebeul, DE
Axel Preusse · Radebeul, DE
Markus Nopper · Dresden, DE
Frank Mauersberger · Radebeul, DE

Key dates

Filing date	Sep 19, 2003
Grant date	Oct 25, 2005
Priority date	—
Expiry date	Dec 18, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76877
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In a new method of plating metal onto dielectric layers including small diameter vias and large diameter trenches, a surface roughness is created at least on non-patterned regions of the dielectric layer to enhance the uniformity of material removal in a subsequent chemical mechanical polishing (CMP) process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.